🗒️ Note: we will start by considering the NEFM

🗒️ Note: in NEFM there is both $\rm KE$ and $\rm PE$

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$$ \begin{aligned} \text{when }\delta t\to 0 \qquad Fv&=\frac{\text dE}{\text dt}=\frac{\text dE}{\text dk}\frac{\text dk}{\text dt} \qquad \\ F&= \frac 1v \frac{\text dE}{\text dk} \frac{\text dk}{\text dt} = \hbar \frac{\text dk}{\text dt} \end{aligned} $$

Screenshot 2024-04-10 171506.png

🗒️ Note: we would have gotten the same result with FEM


💼 Case: consider $m^* <0$

Due to a small number of vacant state (holes), which move opposite of net electron flow direction

🗒️ Note: we can think of negative $m^*$ as electrons which are positively charged

💼 Case: consider a quantum state where a band is almost full of electrons with just one vacant site

The hall effect

💼 Case: Consider a sample, a magnetic field is applied $\perp$ to an electric field driving a current

Electrons experience A Lorentz force to the right, curving its trajectory, causing a build-up on the edge of the slab ($y$-axis)

Screenshot 2024-04-10 175119.png

🗒️ Note: the Hall coefficient relates mobility to the conductivity

$$ \sigma=ne\mu \qquad \mu=|R_H| \sigma $$

Metal Sign of $R_H$
$\rm Na$ - minus
$\rm K$ - minus
$\rm Cu$ - minus
$\rm Be$ + plus
$\rm Mg$ - minus
$\rm Cd$ + plus
$\rm Al$ - minus

Intrinsic semiconductors

<aside> <img src="https://prod-files-secure.s3.us-west-2.amazonaws.com/369dfa6b-d4d9-4cf2-a446-e369553b6347/28ebaf8f-7ad0-4ee3-9736-e11c4d348549/Intrinsic_conductor.png" alt="https://prod-files-secure.s3.us-west-2.amazonaws.com/369dfa6b-d4d9-4cf2-a446-e369553b6347/28ebaf8f-7ad0-4ee3-9736-e11c4d348549/Intrinsic_conductor.png" width="40px" /> Intrinsic conductor: Conductivity arises from the material's own properties (no impurities), it possesses a small energy gap allowing some electrons to enter the conduction band at normal temperatures, enabling a slight current. This conductivity, involving both electrons and holes, increases significantly with temperature as more electrons get excited.

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🗒️ Note: thus density of current carrying electrons $n$ $\uparrow$ with $T$, $n=p$ so concentration of holes $\uparrow$